Search results for "Extrinsic semiconductor"
showing 2 items of 2 documents
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure
2016
The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and were annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing the majority phase was TiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn, and MnSn2…
Photoelectrochemical study of electrochemically formed semiconducting yttrium hydride (YH3−x)
1999
Abstract The first photoelectrochemical study of semiconducting YH 3− x films formed by etching bulk Y metal in 0.5 M H 2 SO 4 solution is reported. The formation of semiconducting hydride having an indirect optical band gap, E g opt , of about 2.35 eV is confirmed by in situ photocurrent spectroscopy. The photoelectrochemical behaviour of such a phase was investigated both in alkaline and in acidic solutions. The flat band potential was estimated to be U fb =−1.25 V/NHE, independent of pH.